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Properties and Growth of Semiconductors BOOK CHAPTER published 2022 in Semiconductor Physics |
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Carrier Scattering at High Electric Fields BOOK CHAPTER published 2022 in Semiconductor Physics |
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Design of film supported single mesa Schottky diodes for above 1THz application with submicron T-junction JOURNAL ARTICLE published 1 October 2022 in Semiconductor Science and Technology Research funded by National Natural Science Foundation of China (61871072) |
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Semiconductors BOOK CHAPTER published 31 May 2019 in Semiconductor Radiation Detectors |
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Comprehensive analysis of optoelectronic performance of ultraviolet phototransistors based on AlGaN/GaN heterostructure JOURNAL ARTICLE published 1 October 2022 in Semiconductor Science and Technology Research funded by Key R&D Program of China (2021YFB3202500) | International Science and Technology Cooperation Program of Shanghai Science and Technology Innovation Action Plan (21520713300) | National Natural Science Foundation of China (11974320) |
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Carrier Transport Induced and Controlled by Defects BOOK CHAPTER published 2022 in Semiconductor Physics |
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Carriers in Magnetic Fields and Temperature Gradients BOOK CHAPTER published 2022 in Semiconductor Physics |
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Energy Bands OTHER published 17 August 2020 in Semiconductor Basics |
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Hexagonal Ta2O5 (10 JOURNAL ARTICLE published August 2024 in Materials Science in Semiconductor Processing Research funded by National Natural Science Foundation of China (52202159) |
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Photoelectrochemical and photocatalytic activity of TiO2-WO3 heterostructures boosted by mutual interaction JOURNAL ARTICLE published December 2018 in Materials Science in Semiconductor Processing Research funded by CSIR (02 (0193)/14/EMR-II) |
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Dynamic threshold mode operation of p-channel Si and strained-SiGe MOSFETs between 10 K and 300 K JOURNAL ARTICLE published 1 September 2004 in Semiconductor Science and Technology |
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GaN MSM structure UV photodetector detector based on nonplanar Si substrate and its performance optimization JOURNAL ARTICLE published 1 October 2022 in Semiconductor Science and Technology Research funded by National Nature Science Foundation of China (11974016) |
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Modeling and Simulation of Emerging Low-Power Devices BOOK CHAPTER published 22 July 2022 in Emerging Low-Power Semiconductor Devices |
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Physical mechanisms of the influence of γ-ray surface treatment on the characteristics of close AuNi/n–n+-GaN Schottky contacts JOURNAL ARTICLE published 1 October 2022 in Semiconductor Science and Technology Research funded by Sevastopol State University (42-01-09/90/2020-1) |
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High-dose Mn and Cr implantation into p-AlGaN films JOURNAL ARTICLE published 1 October 2004 in Semiconductor Science and Technology |
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Dedication BOOK SECTION published 5 April 2022 in Semiconductor Nanophotonics |
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Close oxygen coupled low-pressure chemical vapor deposition growth of high quality JOURNAL ARTICLE published August 2022 in Materials Science in Semiconductor Processing |
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A 50 dB high-gain operational amplifier integrated with metal-oxide TFTs JOURNAL ARTICLE published 1 October 2022 in Semiconductor Science and Technology Research funded by Natural Science Foundation of Guangdong Province (2021A1515011951) | Ji Hua Laboratory (X190221TF190) | National Natural Science Foundation of China (22090024) | Science and Technology Program of Guangdong Province (2017B090901006) |
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Electronic and optical properties of CsGeX JOURNAL ARTICLE published June 2022 in Materials Science in Semiconductor Processing |
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Preface BOOK SECTION published 5 April 2022 in Semiconductor Nanophotonics |
![Cite](javascript:showCiteBox("10.1016/j.mssp.2024.108481", "Hexagonal Ta2O5 (10 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.svg"><mml:mover accent="true"><mml:mn mathvariant="bold">1</mml:mn><mml:mo>‾</mml:mo></mml:mover></mml:math> 0) single-crystalline films grown on LaAlO3 (010) substrates by MOCVD");){kind=link}
![Cite](javascript:showCiteBox("10.1016/j.mssp.2022.106645", "Close oxygen coupled low-pressure chemical vapor deposition growth of high quality <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.svg"><mml:mrow><mml:mi>β</mml:mi><mml:mo linebreak="goodbreak" linebreakstyle="after">−</mml:mo><mml:mi>G</mml:mi><mml:msub><mml:mi>a</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math> on sapphire");){kind=link}
![Cite](javascript:showCiteBox("10.1016/j.mssp.2022.106488", "Electronic and optical properties of CsGeX<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="d1e1017" altimg="si35.svg"><mml:msub><mml:mrow /><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:math>M (X ,M = Br, Cl, I) perovskites for solar cell applications: First-principles study using PBE and TB-mBJ potentials");){kind=link}