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Contributed Review: Experimental characterization of inverse piezoelectric strain in GaN HEMTs via micro-Raman spectroscopy

Journal Article published Jun 2016 in Review of Scientific Instruments volume 87 issue 6 on page 061501

Research funded by MIT-Singapore SMART LEES Program | MIT/MTL GaN Energy Initiative

Authors: Kevin R. Bagnall, Evelyn N. Wang

Electric field dependence of optical phonon frequencies in wurtzite GaN observed in GaN high electron mobility transistors

Journal Article published 21 Oct 2016 in Journal of Applied Physics volume 120 issue 15 on page 155104

Research funded by MIT-Singapore SMART LEES Program | MIT/MTL GaN Energy Initiative

Authors: Kevin R. Bagnall, Cyrus E. Dreyer, David Vanderbilt, Evelyn N. Wang

Four-Way Microstrip-Based Power Combining for Microwave Outphasing Power Amplifiers

Journal Article published Oct 2014 in IEEE Transactions on Circuits and Systems I: Regular Papers volume 61 issue 10 on pages 2987 to 2998

Research funded by MIT Center for Integrated Circuits and Systems | MIT/MTL GaN Energy Initiative

Authors: Taylor W. Barton, David J. Perreault

Theory of Thermal Time Constants in GaN High-Electron-Mobility Transistors

Journal Article published Apr 2018 in IEEE Transactions on Components, Packaging and Manufacturing Technology volume 8 issue 4 on pages 606 to 620

Research funded by MIT/MTL GaN Energy Initiative | Singapore-MIT Alliance for Research and Technology (SMART) LEES Program | U.S. Department of Defense | Air Force Office of Scientific Research (32 CFR 168a)

Authors: Kevin R. Bagnall, Evelyn N. Wang

High-Power Radiation at 1 THz in Silicon: A Fully Scalable Array Using a Multi-Functional Radiating Mesh Structure

Journal Article published May 2018 in IEEE Journal of Solid-State Circuits volume 53 issue 5 on pages 1313 to 1327

Research funded by National Science Foundation | Analog Devices | Singapore-MIT Research Alliance | MIT/MTL GaN Energy Initiative | MIT Center of Integrated Circuits and Systems

Authors: Zhi Hu, Mehmet Kaynak, Ruonan Han

Experimental Characterization of the Thermal Time Constants of GaN HEMTs Via Micro-Raman Thermometry

Journal Article published May 2017 in IEEE Transactions on Electron Devices volume 64 issue 5 on pages 2121 to 2128

Research funded by MIT/MTL GaN Energy Initiative | Singapore-MIT Alliance for Research and Technology (SMART) LEES Program | Air Force Office of Scientific Research (32 CFR 168a) | ONRPECASE program monitored by Dr. P. Maki

Authors: Kevin R. Bagnall, Omair I. Saadat, Sameer Joglekar, Tomas Palacios, Evelyn N. Wang