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Applied Materials
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Formation of atomically ordered and chemically selective Si—O—Ti monolayer on Si0.5Ge0.5(110) for a MIS structure via H2O2(g) functionalization

Journal Article published 7 Feb 2017 in The Journal of Chemical Physics volume 146 issue 5 on page 052808

Research funded by National Science Foundation (1207213) | Semiconductor Research Corporation (2013-VJ-2451) | Applied Materials

Authors: Sang Wook Park, Jong Youn Choi, Shariq Siddiqui, Bhagawan Sahu, Rohit Galatage, Naomi Yoshida, Jessica Kachian, Andrew C. Kummel

FinFET With Encased Air-Gap Spacers for High-Performance and Low-Energy Circuits

Journal Article published Jan 2017 in IEEE Electron Device Letters volume 38 issue 1 on pages 16 to 19

Research funded by Applied Materials | Entegris, Inc.

Authors: Angada B. Sachid, Yao-Min Huang, Yi-Ju Chen, Chun-Chi Chen, Darsen D. Lu, Min-Cheng Chen, Chenming Hu

Density-Functional Theory Molecular Dynamics Simulations and Experimental Characterization of a-Al2O3/SiGe Interfaces

Journal Article published 17 Nov 2015 in ACS Applied Materials & Interfaces volume 7 issue 47 on pages 26275 to 26283

Research funded by Semiconductor Research Corporation | Division of Materials Research (DMR1207213) | Applied Materials

Authors: Evgueni Chagarov, Kasra Sardashti, Tobin Kaufman-Osborn, Shailesh Madisetti, Serge Oktyabrsky, Bhagawan Sahu, Andrew Kummel

FinFET With High- $\kappa $ Spacers for Improved Drive Current

Journal Article published Jul 2016 in IEEE Electron Device Letters volume 37 issue 7 on pages 835 to 838

Research funded by Entegris Inc. | Applied Materials

Authors: Angada B. Sachid, Min-Cheng Chen, Chenming Hu

Deactivation of electrically supersaturated Te-doped InGaAs grown by MOCVD

Journal Article published 6 Jun 2017 in Journal of Materials Science volume 52 issue 18 on pages 10879 to 10885

Research funded by Applied Materials

Authors: E. L. Kennon, T. Orzali, Y. Xin, A. Vert, A. G. Lind, K. S. Jones

Fabrication and Low Temperature Characterization of Ge (110) and (100) p-MOSFETs

Journal Article published Jun 2014 in IEEE Transactions on Electron Devices volume 61 issue 6 on pages 2215 to 2219

Research funded by Ministry of Science and Technology, Taiwan (100-2221-E-002-181-MY3, 102-2120-M-002-001, 102-2218-E-002-003, 103-2911-I-009-302, 102-2622-E-002-014) | Applied Materials

Authors: I-Hsieh Wong, Yen-Ting Chen, Jhih-Yang Yan, Huang-Jhih Ciou, Yu-Sheng Chen, Chee Wee Liu

Suppressing Non-Uniform Tunneling in InAs/GaSb TFET With Dual-Metal Gate

Journal Article published Mar 2016 in IEEE Journal of the Electron Devices Society volume 4 issue 2 on pages 60 to 65

Research funded by ATMI/Entegris | Applied Materials | NCTU-UCB I-RiCE Program, Ministry of Science and Technology, Taiwan (MOST-105-2911-I-009-301)

Authors: Ching-Yi Hsu, Chun-Yen Chang, Edward Yi Chang, Chenming Hu

Nanowire FET With Corner Spacer for High-Performance, Energy-Efficient Applications

Journal Article published Dec 2017 in IEEE Transactions on Electron Devices volume 64 issue 12 on pages 5181 to 5187

Research funded by Applied Materials | Tsinghua University

Authors: Angada B. Sachid, Hsiang-Yun Lin, Chenming Hu

Spatial–temporal stability analysis of faceted growth with application to horizontal ribbon growth

Journal Article published Nov 2016 in Journal of Crystal Growth volume 454 on pages 35 to 44

Research funded by U.S. Department of Energy (DE-EE0000595) | Varian Semiconductor Equipment | Applied Materials

Authors: Brian T. Helenbrook, Nathaniel S. Barlow

Modulating the resistivity of MoS2 through low energy phosphorus plasma implantation

Journal Article published 26 Jun 2017 in Applied Physics Letters volume 110 issue 26 on page 262102

Research funded by Applied Materials

Authors: K. Haynes, R. Murray, Z. Weinrich, X. Zhao, D. Chiappe, S. Sutar, I. Radu, C. Hatem, S. S. Perry, K. S. Jones