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Akasaki Institute, Nagoya University
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Annealing of the sputtered AlN buffer layer on r -plane sapphire and its effect on a -plane GaN crystalline quality

Journal Article published 17 Jul 2017 in physica status solidi (b) volume 254 issue 8 on page 1600723

Research funded by Akasaki Institute, Nagoya University

Authors: Daiki Jinno, Shunya Otsuki, Teruyuki Niimi, Shogo Sugimori, Hisayoshi Daicho, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki